Study of Properties of Tellurium Doped Indium Phosphide as Photoconversion Material

The microduty bipolar phototransistor on the base of gallium arsenic n-p-m-structure.

Features of the temperature properties of a field-effect transistor in a current-limiting mode

Thermal model of the limiter diode

Control of the profile of the impurity distribution in epitaxial layers grown from a solution-melt with regulated volume and composition

A Compensation Method for Measuring the Junction Temperature of a p+-p-n+ Silicon Structure

Physical Principles of Photocurrent Generation in Multi-Barrier Punch-Through-Structures.

Duplicate of Some Features of Photocurrent Generation in Single and Multibarrier Photodiode Structures.

Some Features of Photocurrent Generation in Single and Multibarrier Photodiode Structures.

Photocurrent amplification effect of the fet gate p–n junction

Structural and Some Electrophysical Properties of the Solid Solutions Si1 – xSnx (0 ≤ x ≤ 0.04)

Approximate Effectiveness Evaluation of Si Solar Cell Tandem with Photothermopile