Photoconverters Based on Gallium Arsenide Diffused p–n Junctions Formed on a Microprofile GaAs Surface

Photocurrent amplification effect of the fet gate p–n junction

Optical FET Output Characteristics Research in Light-Activated Mode. Radioelectronics and Communications Systems

Investigation of the photoelectric characteristics of photodiode structures with silicon-based potential barriers

Control of the profile of the impurity distribution in epitaxial layers grown from a solution-melt with regulated volume and composition

Physical Principles of Photocurrent Generation in Multi-Barrier Punch-Through-Structures.

Duplicate of Some Features of Photocurrent Generation in Single and Multibarrier Photodiode Structures. Some Features of Photocurrent Generation in Single and Multibarrier Photodiode Structu

The microduty bipolar phototransistor on the base of gallium arsenic n-p-m-structure

Features of the temperature properties of a field-effect transistor in a current-limiting mode

Thermal model of the limiter diode