Special Features of Formation of HighPerformance Semiconductor Detectors Based on αSi–Si(Li) Heterostructures

R. A. Muminov, A. K. Saymbetov, and Yo. K. Toshmurodov

Muminov R.A., Saymbetov A.R., Toshmurodov Yo.K. Special Freatures of Formation of High-Performance Semiconductor Detectors Based on αSi-Si(Li) heterostructures // Instruments and experimental techniques - New York. 2013. № 1. pp. 32-33.

A production technology of nuclear radiation detectors based on αSi–Si(Li) heterostructures is considered. It is shown that these detectors are more efficient as compared to traditional p–n structures due to a thin nearsurface (“dead”) layer.

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