Special Features of Formation of HighPerformance Semiconductor Detectors Based on αSi–Si(Li) Heterostructures

Muminov R.A., Saymbetov A.R., Toshmurodov Yo.K. Special Freatures of Formation of High-Performance Semiconductor Detectors Based on αSi-Si(Li) heterostructures // Instruments and experimental techniques - New York. 2013. № 1. pp. 32-33.

A production technology of nuclear radiation detectors based on αSi–Si(Li) heterostructures is considered. It is shown that these detectors are more efficient as compared to traditional p–n structures due to a thin nearsurface (“dead”) layer.