The microduty bipolar phototransistor on the base of gallium arsenic n-p-m-structure.

In the present paper, the results of the research on light characteristics of gallium arsenic two-barrier n-pm-structure - analogue of bipolar phototransistor are presented. Experimentally, it is shown that photoelectric characteristics vary depending on switching on conditions of nGaAs-pGaAs-Ag structure. The researched structures differ with functionability in photodiode and phototransistor modes as microduty devices.

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