LiquidPhase Epitaxy of the (Si2)1 – x – y(Ge2)x(GaAs)y Substitutional Solid Solution (0 ≤ x ≤ 0.91, 0 ≤ y ≤ 0.94) and Their Electrophysical Properties

Saidov A. S., Usmonov Sh. N., Saidov M. S. Liquid Phase Epitaxy of the (Si2)1 – x – y(Ge2)x(GaAs)y Substitutional Solid Solution (0 ≤ x ≤ 0.91, 0 ≤ y ≤ 0.94) and Their Electrophysical Properties. // Semiconductors. 2015. V. 49. No.4. pp. 547–550.

(Si2)1 – x – y(Ge2)x(GaAs)y substitutional solid solutions (0 ≤ x ≤ 0.91, 0 ≤ y ≤ 0.94) are grown by liquidphase epitaxy from a Pbbased solution–melt on Si substrates with the (111) crystallographic orienta tion. The chemical composition of the epitaxial films is studied by Xrays probe microanalysis, and the dis tribution profile of solid solution components is determined. Spectral dependences of the photosensitiv ity and photoluminescence of the nSi–p(Si2)1 – x – y(Ge2)x(GaAs)y heterostructures are studied at room and liquidnitrogen temperatures. Two maxima are found in the photoluminescence spectra of the (Si2)1 – x – y(Ge2)x(GaAs)y films (0 ≤ x ≤ 0.91, 0 ≤ y ≤ 0.94) against the background of a broad emission spec trum. The fundamental maximum with an energy of 1.45 eV is caused by the bandtoband recombination of solid solution carriers, and an additional maximum with an energy of 1.33 eV is caused by the recombination of carriers with the participation of impurity levels of the Si–Si bond (Si2 is covalently coupled with the tet rahedral lattice of the solid solution host).

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