Study of GaSb Doped with Te as a Material for Photovoltaic Systems

A. Yu. Leiderman, A. S. Saidov, M. M. Khashaev, and U. Kh. Rakhmonov

Leiderman A. Yu., Saidov A. S., Khashaev M. M., et al. Study of GaSb Doped with Te as a Material for Photovoltaic Systems. // Applied Solar Energy. 2015. V. 51. No. 2. pp. 117–119.

The article reports the results of study of nGaSb⟨Te⟩ specimens with plain ohmic contacts and demonstrates that at T > 50°C the studied structure generates current (up to 0.4 nA at T = 200°C) and voltage (up to 0.4 mV at T = 210°C). These phenomena are attributed to thermally stimulated decomposition of “shallow donor + vacancy” complexes with subsequent formation of periodic distribution of concentration of vacancies and shallow donors over the specimen length.

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