Study of Properties of Tellurium Doped Indium Phosphide as Photoconversion Material
The microduty bipolar phototransistor on the base of gallium arsenic n-p-m-structure.
Features of the temperature properties of a field-effect transistor in a current-limiting mode
Thermal model of the limiter diode
Control of the profile of the impurity distribution in epitaxial layers grown from a solution-melt with regulated volume and composition
A Compensation Method for Measuring the Junction Temperature of a p+-p-n+ Silicon Structure
Physical Principles of Photocurrent Generation in Multi-Barrier Punch-Through-Structures.
Some Features of Photocurrent Generation in Single and Multibarrier Photodiode Structures.
Photocurrent amplification effect of the fet gate p–n junction
Structural and Some Electrophysical Properties of the Solid Solutions Si1 – xSnx (0 ≤ x ≤ 0.04)
Approximate Effectiveness Evaluation of Si Solar Cell Tandem with Photothermopile