The microduty bipolar phototransistor on the base of gallium arsenic n-p-m-structure

In the present paper, the results of the research on light characteristics of gallium arsenic two-barrier n-p- m-structure - analogue of bipolar phototransistor are presented. Experimentally, it is shown that photoelectric characteristics vary depending on switching on conditions of nGaAs-pGaAs-Ag structure. The researched structures differ with functionability in photodiode and phototransistor modes as microduty devices.