Photoconverters Based on Gallium Arsenide Diffused p–n Junctions Formed on a Microprofile GaAs Surface
Photocurrent amplification effect of the fet gate p–n junction
Optical FET Output Characteristics Research in Light-Activated Mode. Radioelectronics and Communications Systems
Investigation of the photoelectric characteristics of photodiode structures with silicon-based potential barriers
Control of the profile of the impurity distribution in epitaxial layers grown from a solution-melt with regulated volume and composition
Physical Principles of Photocurrent Generation in Multi-Barrier Punch-Through-Structures.
Some Features of Photocurrent Generation in Single and Multibarrier Photodiode Structures. Some Features of Photocurrent Generation in Single and Multibarrier Photodiode Structures.
The microduty bipolar phototransistor on the base of gallium arsenic n-p-m-structure
Features of the temperature properties of a field-effect transistor in a current-limiting mode
Thermal model of the limiter diode