Investigation of the photoelectric characteristics of photodiode structures with silicon-based potential barriers

Based on silicon with a base region thickness of 300 μm, phototransforming Au–nSi–Au structures with potential barriers are prepared. The diode structures obtained possess high photosensitivity in the spectral region 0.9–1.1 μm at low illumination intensities of 10 lux (up to 5 A/W). Based on investigations of the photoelectric characteristics, it has been established that the Au–nSi–Au structures in the range of temperatures from room temperature to 40o C at low working voltages (0.1–0.2 V) are distinguished by the weak temperature dependence of photocurrents. In principle, in the spectral range 0.7–1.1 μm the Au–nSi–Au structures obtained can easily replace both gallium arsenide and classical silicon photodiodes with one rectifying junction in optoelectronic devices.

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