Duplicate of Study of Properties of Tellurium Doped Indium Phosphide as Photoconversion Material

Duplicate of The microduty bipolar phototransistor on the base of gallium arsenic n-p-m-structure.

Duplicate of Features of the temperature properties of a field-effect transistor in a current-limiting mode

Duplicate of Thermal model of the limiter diode

Duplicate of Control of the profile of the impurity distribution in epitaxial layers grown from a solution-melt with regulated volume and composition

Duplicate of A Compensation Method for Measuring the Junction Temperature of a p+-p-n+ Silicon Structure

Duplicate of Physical Principles of Photocurrent Generation in Multi-Barrier Punch-Through-Structures.

Duplicate of Some Features of Photocurrent Generation in Single and Multibarrier Photodiode Structures.

Duplicate of Some Features of Photocurrent Generation in Single and Multibarrier Photodiode Structures.

Duplicate of Photocurrent amplification effect of the fet gate p–n junction

Duplicate of Structural and Some Electrophysical Properties of the Solid Solutions Si1 – xSnx (0 ≤ x ≤ 0.04)

Duplicate of Approximate Effectiveness Evaluation of Si Solar Cell Tandem with Photothermopile