Duplicate of Study of Properties of Tellurium Doped Indium Phosphide as Photoconversion Material
The results of the studies of nInP⟨Te⟩ with simple ohmic contacts in the temperature range of 30–250°C have been given because this material is promising for the photoconverters due to its wide bandgapand radiation resistance. It has been determined that, at a temperature of T > 50°C, this structure generates current (up to 0.15 μA) and voltage (up to 11 mV); this is caused by the thermally stimulated formation of
vacancies.