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PHYSICAL-TECHNICAL INSTITUTE NGO "PHYSICS-SUN", ASUz
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Instrumentation in electronics, optoelectronics and photonics

Laboratory`s publication

Duplicate of Photoconverters Based on Gallium Arsenide Diffused p–n Junctions Formed on a Microprofile GaAs Surface

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Duplicate of Photocurrent amplification effect of the fet gate p–n junction

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Duplicate of Optical FET Output Characteristics Research in Light-Activated Mode. Radioelectronics and Communications Systems

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Duplicate of Investigation of the photoelectric characteristics of photodiode structures with silicon-based potential barriers

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Duplicate of Control of the profile of the impurity distribution in epitaxial layers grown from a solution-melt with regulated volume and composition

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Duplicate of Physical Principles of Photocurrent Generation in Multi-Barrier Punch-Through-Structures.

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Duplicate of Some Features of Photocurrent Generation in Single and Multibarrier Photodiode Structures. Some Features of Photocurrent Generation in Single and Multibarrier Photodiode Structu

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Duplicate of The microduty bipolar phototransistor on the base of gallium arsenic n-p-m-structure

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Duplicate of Features of the temperature properties of a field-effect transistor in a current-limiting mode

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Duplicate of Thermal model of the limiter diode

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Instrumentation in electronics, optoelectronics and photonics

  • Laboratory`s publication

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  • Uzbekistan, 100084, Tashkent city, st. Chingiz Aytmatov 2B

  • +99871 235 93 61

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