Duplicate of Photoconverters Based on Gallium Arsenide Diffused p–n Junctions Formed on a Microprofile GaAs Surface

Duplicate of Photocurrent amplification effect of the fet gate p–n junction

Duplicate of Optical FET Output Characteristics Research in Light-Activated Mode. Radioelectronics and Communications Systems

Duplicate of Investigation of the photoelectric characteristics of photodiode structures with silicon-based potential barriers

Duplicate of Control of the profile of the impurity distribution in epitaxial layers grown from a solution-melt with regulated volume and composition

Duplicate of Physical Principles of Photocurrent Generation in Multi-Barrier Punch-Through-Structures.

Duplicate of Some Features of Photocurrent Generation in Single and Multibarrier Photodiode Structures. Some Features of Photocurrent Generation in Single and Multibarrier Photodiode Structu

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Duplicate of Features of the temperature properties of a field-effect transistor in a current-limiting mode

Duplicate of Thermal model of the limiter diode